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GaN-HEMT Based Very-High-Frequency AC Power Supply for Electrosurgery.

Congbo Bao¹, Sudip K Mazumder¹

¹Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois, USA.

Conference Proceedings. IEEE Applied Power Electronics Conference and Exposition

|September 9, 2022

Summary

A novel full-bridge very-high-frequency AC inverter (VHFI) powers electrosurgery. This Gallium Nitride High Electron Mobility Transistor (GaN HEMT) based design achieves low total harmonic distortion (THD) and fast response times across various surgical modes.

Keywords:

GaN-HEMT electrosurgery full-bridge high-frequency AC inverter variable load

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Area of Science:

Electrical Engineering
Medical Devices

Background:

Electrosurgery requires a very-high-frequency AC inverter (VHFI) for power delivery.
Existing VHFI technologies may have limitations in efficiency, distortion, or response time.

Purpose of the Study:

To propose and validate a full-bridge based VHFI for electrosurgery applications.
To evaluate the performance of a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) based VHFI.

Main Methods:

Design and implementation of a 300 W, 390 kHz GaN HEMT based VHFI experimental setup.
Analysis of high-frequency output generation and high-order filter design.
Experimental testing in pure cutting, blend cutting, and coagulation modes.

Main Results:

Maximum total harmonic distortion (THD) below 2.5% in pure cutting mode.
Extreme fast-responding time demonstrated in blend cutting and coagulation modes.
Crest factor of approximately 21 in coagulation mode.

Conclusions:

The proposed VHFI is feasible for electrosurgery.
The GaN HEMT based VHFI effectively supports diverse load values and clinical modes.
This VHFI technology offers high performance for modern electrosurgical devices.