Fluorinated Interlayer Modulation of NiOx-Based Inverted Perovskite Solar Cells

p-Type inorganic nickel oxide (NiOx) exhibits high transparency, tunable-optoelectronic properties, and a work function (W_F) that is potentially suitable for hole extraction in inverted perovskite solar cells (PSCs). However, NiOx films possess surface defects that lead to high interfacial recombination and an energy offset with the ionization potential of the perovskite. Herein, we show that fluorinated 3-(2,3,4,5,6-pentafluorophenyl)propan-1-aminium iodide (FPAI) can be used to modify the electronic properties of the NiOx anode interlayer. The FPAI modification led to good perovskite crystal growth and films with reduced surface defects. The FPAI modification also increased the W_F of NiOx and improved charge extraction. These improvements led to an increased V_oc value compared with control devices without FPAI modification, 1.05 V versus 1.00 V, and a higher short-circuit current and larger fill factor. As a result, the best PSCs with FPAI-modified NiOx had a power conversion efficiency of 19.3%. Finally, the PSCs with the FPAI-modified NiOx layer were found to have improved stability.