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Updated: Aug 29, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Gate-controlled electron quantum interference logic
Josef Weinbub1, Mauro Ballicchia2, Mihail Nedjalkov2
1Christian Doppler Laboratory for High Performance TCAD, Institute for Microelectronics, TU Wien, Austria. josef.weinbub@tuwien.ac.at.
Abstract:
Inspired by using the wave nature of electrons for electron quantum optics, we propose a new type of electron quantum interference structure, where single-electron waves are coherently injected into a gate-controlled, two-dimensional waveguide and exit through one or more output channels. The gate-controlled interference effects lead to specific current levels in the output channels, which can be used to realize logic gate operations, e.g., NAND or NOR gates. The operating principle is shown by coherent, dynamic Wigner quantum electron transport simulations. A discussion of classical simulations (Boltzmann) allows to outline the underlying process of interference. Contrary to other electron control approaches used for advanced information processing, no magnetic or photonic mechanisms are involved.
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