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Published on: December 5, 2015
Localized interlayer excitons in MoSe2-WSe2 heterostructures without a moiré potential.
Fateme Mahdikhanysarvejahany1, Daniel N Shanks1, Matthew Klein1
1Department of Physics, University of Arizona, Tucson, AZ, 85721, USA.
Spectrally narrow interlayer exciton (IX) photoluminescence (PL) in MoSe2-WSe2 heterobilayers is observed even without moiré potential localization. This suggests the moiré potential is not the sole origin of these narrow IX PL lines.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Optoelectronics
Background:
- Interlayer excitons (IXs) in transition metal dichalcogenide (TMD) heterobilayers are tunable light emitters.
- Previous studies attributed narrow photoluminescence (PL) lines to IXs localized by moiré potential.
Purpose of the Study:
- Investigate the origin of spectrally narrow IX PL lines.
- Determine if moiré potential is essential for IX localization.
Main Methods:
- Fabrication of MoSe2-WSe2 heterobilayers with and without hexagonal boron nitride (hBN) spacers.
- Comparison of doping, electric field, magnetic field, and temperature dependence of IX PL.
- Analysis of excitonic g-factors.
Main Results:
- Spectrally narrow IX PL lines persist even when moiré potential is suppressed by an hBN spacer.
- Doping, electric field, and temperature dependencies are similar with and without hBN.
- Excitonic g-factors show opposite signs, contradicting moiré potential localization.
Conclusions:
- The moiré potential is not the exclusive origin of spectrally narrow IX PL in MoSe2-WSe2 heterobilayers.
- Other localization mechanisms likely contribute to the observed narrow PL lines.
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