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Integrated Pockels laser.

Mingxiao Li1, Lin Chang2, Lue Wu3

  • 1Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY, 14627, USA.

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|September 13, 2022
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Summary
This summary is machine-generated.

This study integrates the Pockels effect into semiconductor lasers, achieving record 2 exahertz/s modulation speeds and dual infrared/visible lasing. This breakthrough advances integrated photonics for applications like LiDAR and AR/VR.

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Area of Science:

  • Photonics
  • Materials Science
  • Electrical Engineering

Background:

  • Integrated semiconductor lasers have miniaturized optical systems.
  • Previous III-V based lasers and III-V/external cavity structures improved coherence and stability.
  • Key functionalities were missing in existing integrated laser designs.

Purpose of the Study:

  • To integrate the Pockels effect into a semiconductor laser for enhanced functionality.
  • To demonstrate novel capabilities in hybrid integrated III-V/Lithium Niobate lasers.
  • To overcome limitations of previous integrated laser systems.

Main Methods:

  • Utilized a hybrid integrated III-V/Lithium Niobate (LiNbO3) structure.
  • Integrated the electro-optic effect to enable new laser functionalities.
  • Employed second-harmonic frequency conversion for multi-color lasing.

Main Results:

  • Achieved a record frequency modulation speed of 2 exahertz/s (2.0 × 10^18 Hz/s).
  • Demonstrated fast switching capabilities at 50 MHz.
  • Co-lased at infrared and visible frequencies, creating the first integrated multi-color laser.
  • Exhibited narrow linewidth and wide tunability.

Conclusions:

  • The hybrid III-V/LiNbO3 laser integrates essential functions previously absent in semiconductor lasers.
  • This novel integrated laser architecture offers unprecedented modulation speeds and multi-color capabilities.
  • The device shows significant potential for advanced applications in LiDAR, microwave photonics, atomic physics, and augmented/virtual reality (AR/VR).