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Flexible Threshold Switching Based on CsCu2I3 with Low Threshold Voltage and High Air Stability
Fengchang Huang1,2, Shuaipeng Ge2,3, Ruilai Wei1,2
1Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004, P. R. China.
This study introduces a lead-free halide perovskite CsCu2I3 for threshold switching devices (TSDs). The new TSDs offer low voltage, high stability, and tunable multilevel switching, advancing memristor technology.
Area of Science:
- Materials Science
- Solid-State Electronics
- Optoelectronics
Background:
- Halide perovskites show promise for threshold switching devices (TSDs) crucial for memristors and neuromorphic computing.
- Current TSDs face challenges including high threshold voltage, poor stability, and lead content.
- All-inorganic halide perovskites offer a potential solution to these limitations.
Purpose of the Study:
- To demonstrate a unipolar threshold switching device (TSD) using the all-inorganic halide perovskite CsCu2I3.
- To investigate the device's performance metrics, including threshold voltage, ON/OFF ratio, stability, and switching slope.
- To explore methods for reducing the threshold voltage and achieving multilevel switching behavior.
Main Methods:
- Fabrication of a unipolar TSD utilizing CsCu2I3 as the active switching material.
- Characterization of the device's electrical properties, including current-voltage (I-V) sweeps.
- Evaluation of device stability under ambient conditions and the effect of UV illumination.
- Investigation of multilevel switching by modulating compliance current and scan rate.
Main Results:
- Demonstrated a unipolar TSD with a low threshold voltage of 0.54 V and a high ON/OFF ratio of 10^4.
- Achieved robust air stability for over 70 days with a steep switching slope of 6.2 mV·decade^-1.
- Reduced threshold voltage to 0.23 V under UV illumination, attributed to suppressed iodide ion migration.
- Successfully realized multilevel threshold switching by adjusting compliance current and scan rate.
- Developed mechanically compliant and transparent TSDs.
Conclusions:
- The CsCu2I3-based TSD presents a promising lead-free alternative for next-generation electronic devices.
- The device exhibits excellent performance characteristics, including low operating voltage and high stability.
- The tunable multilevel switching capability and mechanical flexibility expand the application potential of these perovskite TSDs.
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