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Updated: Aug 28, 2025

Low-energy Cathodoluminescence for OxyNitride Phosphors
Published on: November 15, 2016
Enhanced luminescence of erbium silicate: interstitial lithium directly regulates the lattice structure of erbium
Huabao Shang1, Deren Yang1, Dongsheng Li1
1State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China. mselds@zju.edu.cn.
Abstract:
We prepared high-intensity luminescent films with a high LDP (Er3+ luminescence lifetime-concentration product) of 1.54 × 1019 s × cm-3, where lithium-doped erbium silicate grains are embedded in cristobalite. The near-infrared and up-conversion luminescence intensities of erbium silicate show ∼55 and 40 times enhancement by lithium-doping, respectively. Lithium-doping directly regulates the lattice structure of erbium silicate to enhance luminescence by reducing the crystal field symmetry around erbium, meanwhile, interstitial lithium does not dilute the concentration of erbium ions. Furthermore, lithium-containing dopants promote silica to crystallize, enhancing the luminescence of erbium silicate by reducing the interface defects. These films are expected to achieve high-gain film waveguide amplifiers in chip-scale optoelectronic integration. And this method opens up possibilities to be universally applicable to erbium compounds for enhancing luminescence by directly regulating the lattice structure.
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