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Robust estimation of charge carrier diffusivity using transient photoluminescence microscopy
Narumi Nagaya Wong1, Seung Kyun Ha1, Kristopher Williams1
1Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
The Journal of Chemical Physics
|September 15, 2022
Summary
Accurately measuring charge carrier diffusivity in optoelectronic materials requires advanced modeling. This study presents a numerical framework and fitting algorithm for transient photoluminescence microscopy data, enabling robust diffusivity estimates.
Area of Science:
- Materials Science
- Physical Chemistry
- Optoelectronics
Background:
- Transient microscopy is vital for studying charge carrier dynamics in optoelectronic materials.
- Accurate diffusivity extraction is challenging for free charge carriers due to signal nonlinearity.
Purpose of the Study:
- To develop a numerical framework for modeling free charge carrier spatiotemporal dynamics.
- To simulate transient photoluminescence microscopy data for accurate diffusivity estimation.
Main Methods:
- Developed an efficient 3D numerical solver for charge carrier dynamics.
- Implemented a Markov chain Monte Carlo sampler for fitting experimental data.
- Applied the framework to CdS and methylammonium lead bromide (MAPbBr3) crystals.
Main Results:
- The numerical framework enables significant solving speed reduction.
- Transient photoluminescence microscopy, with this method, provides robust charge carrier diffusivity estimates.
- Recombination constants require different experimental approaches.
Conclusions:
- The developed open-source code and algorithm facilitate accurate diffusivity measurements in optoelectronic materials.
- Model simplifications are possible based on specific experimental conditions and materials.
