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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Floquet quantum thermal transistor.

Nikhil Gupt1, Srijan Bhattacharyya1,2, Bikash Das3

  • 1Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India.

Physical Review. E
|September 16, 2022
PubMed
Summary
This summary is machine-generated.

We introduce the Floquet quantum thermal transistor, using periodic control to manage heat flow and achieve significant amplification. This novel device functions effectively even in cutoff regions where traditional transistors fail.

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Area of Science:

  • Quantum thermodynamics
  • Condensed matter physics
  • Quantum device engineering

Background:

  • Quantum thermal transistors are crucial for controlling heat at the nanoscale.
  • Traditional designs face limitations, particularly in specific operating regimes.

Purpose of the Study:

  • To introduce and analyze the Floquet quantum thermal transistor.
  • To demonstrate enhanced control over heat flow using periodic modulation.

Main Methods:

  • Applying periodic control (Floquet engineering) to a quantum thermal device.
  • Analyzing heat flow dynamics and amplification factors under modulated conditions.

Main Results:

  • Achieved significant amplification factors in heat flow control.
  • Demonstrated the transistor effect's persistence in the cutoff region.
  • Showcased superior performance compared to non-modulated traditional devices.

Conclusions:

  • Periodic modulation offers a powerful method for realizing advanced quantum thermal devices.
  • The Floquet quantum thermal transistor overcomes limitations of traditional designs.
  • This work opens new avenues for quantum heat management and control.