High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes

Area of Science:

• Quantum Information Science
• Atomic Physics
• Integrated Photonics

Background:

• Practical quantum information processing and sensing demand high-speed, high-fidelity ion state readout.
• Integrated detectors offer advantages in portability and parallel operations for trapped-ion systems.

Purpose of the Study:

• To demonstrate room-temperature quantum state detection of trapped ions using integrated single-photon avalanche diodes (SPADs).
• To assess the fidelity and speed of integrated SPADs for ion state readout.

Main Methods:

• Integration of single-photon avalanche diodes (SPADs) directly into silicon ion trapping chip substrates.
• Detection of strontium ion (Sr⁺) fluorescence for quantum state readout.
• Characterization of detection fidelity and timing.

Main Results:

• Achieved 99.92(1)% average fidelity for ion state detection.
• Demonstrated detection within 450 microseconds.
• Successful integration of SPADs with silicon ion traps at room temperature.

Conclusions:

• Integrated SPADs provide a viable solution for high-fidelity, room-temperature ion state detection.
• This technology enables scalable quantum computing and sensing with arrays of trapped ions.
• Facilitates the development of portable and parallelized quantum devices.