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Updated: Aug 28, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Molecular-Shape-Controlled Binary to Ternary Resistive Random-Access Memory Switching of N-Containing Heteroaromatic

Yang Li1,2, Yelong Pan1, Cheng Zhang1

  • 1Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China.

ACS Applied Materials & Interfaces
|September 21, 2022
PubMed

Keywords:
ReRAMdata storageheteroaromatic semiconductorsmolecular designmultilevel resistive memoryorganic electronics

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