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Modulating the thermal and structural stability of gallenene via variation of atomistic thickness
Stephanie Lambie1, Krista G Steenbergen2, Nicola Gaston1
1Department of Physics, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Auckland Private Bag 92019 Auckland New Zealand n.gaston@auckland.ac.nz.
Abstract:
Using ab initio molecular dynamics, we show that a recently discovered form of 2D Ga-gallenene-exhibits highly variable thickness dependent properties. Here, 2D Ga of four, five and six atomic layers thick are found to be thermally stable to 457 K, 350 K and 433 K, respectively; all well above that of bulk Ga. Analysis of the liquid structure of 2D Ga shows a thickness dependent ordering both parallel and perpendicular to the Ga/vacuum interface. Furthermore, ground state optimisations of 2D Ga to 12 atomic layers thick shows a return to a bulk-like bonding structure at 10 atoms thick, therefore we anticipate that up to this thickness 2D Ga structures will each exhibit novel properties as discrete 2D materials. Gallenene has exciting potential applications in plasmonics, sensors and electrical contacts however, for the potential of 2D Ga to be fully realised an in depth understanding of its thickness dependent properties is required.
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