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Modulation of electrical properties in MoTe2 by XeF2-mediated surface oxidation.

Eunji Ji1, Jong Hun Kim1,2,3, Wanggon Lee4

  • 1Department of Material Science and Engineering, Yonsei University Seoul 03722 Korea.

Nanoscale Advances
|September 22, 2022
PubMed
Summary

We developed a method to create a thin, uniform oxidized layer on molybdenum ditelluride (MoTe2) using XeF2 gas. This surface modification significantly enhances MoTe2 field-effect transistor performance, boosting mobility and on/off ratios for 2D electronics.

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Area of Science:

  • Materials Science
  • Surface Chemistry
  • Nanotechnology

Background:

  • Transition metal dichalcogenides (TMDs) possess excellent electrical properties, making them attractive for semiconductor applications.
  • Surface oxidation of TMDs, like molybdenum ditelluride (MoTe2), can effectively modulate their electrical characteristics.
  • Controlling surface oxidation is key to optimizing TMD-based electronic devices.

Purpose of the Study:

  • To demonstrate a XeF2-mediated surface oxidation method for 2H-MoTe2.
  • To investigate the properties of the resulting oxidized layer and its impact on device performance.
  • To utilize the oxidized layer for improved metal contacts in MoTe2 field-effect transistors (FETs).

Main Methods:

  • Exposure of 2H-MoTe2 to XeF2 gas to form a surface oxide layer.
  • Characterization of the oxide layer thickness and uniformity.
  • Fabrication and electrical testing of MoTe2 FETs with and without the oxide interlayer.

Main Results:

  • Formation of a thin, uniform ~2.5 nm MoOx layer on MoTe2 within 120 s, attributed to passivation and etching.
  • Significant reduction in contact resistance by using the MoOx interlayer, overcoming Fermi level pinning.
  • MoTe2 FETs with MoOx interlayer showed a two-order-of-magnitude increase in hole mobility (6.31 cm2 V-1 s-1) and a high on/off ratio (~10^5).

Conclusions:

  • XeF2-mediated oxidation provides a straightforward and effective route to form thin oxide layers on MoTe2.
  • The MoOx interlayer enhances MoTe2 FET performance by improving contact properties.
  • This method holds promise for advancing the field of 2D electronics.