Related Experiment Video
Updated: Aug 28, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Improved charge storage performance of a layered Mo1.33C MXene/MoS2/graphene nanocomposite
Ahmed El Ghazaly1, Ulises A Méndez-Romero2, Joseph Halim1
1Materials Design Division, Department of Physics, Chemistry and Biology (IFM), Linköping University 581 83 Linköping Sweden johanna,rosen@liu.se.
Abstract:
The construction of nanocomposite electrodes based on 2D materials is an efficient route for property enrichment and for exploitation of constituent 2D materials. Herein, a flexible Mo1.33C i-MXene/MoS2/graphene (MOMG) composite electrode is constructed, utilizing an environment-friendly method for high-quality graphene and MoS2 synthesis. The presence of graphene and MoS2 between MXene sheets limits the commonly observed restacking, increases the interlayer spacing, and facilitates the ionic and electronic conduction. The as-prepared MOMG electrode delivers a volumetric capacitance of 1600 F cm-3 (450 F g-1) at the scan rate of 2 mV s-1 and retains 96% of the initial capacitance after 15 000 charge/discharge cycles (10 A g-1). The current work demonstrates that the construction of nanocomposite electrodes is a promising route towards property enhancement for energy storage applications.
More Related Videos
10:53Preparation of Graphene Liquid Cells for the Observation of Lithium-ion Battery Material
Published on: February 5, 2019
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...