Strain-induced band modulation and excellent stability, transport and optical properties of penta-MP₂ (M = Ni, Pd,...

First principle calculations utilizing density functional theory were carried out to investigate the electronic, transport and optical properties of penta-MP₂ (M = Ni, Pd and Pt) monolayer compounds under applied uniaxial and biaxial tensile strains. With an optimum magnitude of applied strain, we found band gap transitions in penta-MP₂ monolayers from zero/narrow to the semiconductor regime, wherein band gaps were noticed to be firmly dependent on the applied uniaxial and biaxial tensile strains. In this study, the PBE approach was used primarily to evaluate electronic properties, from where the identified architectures of penta-MP₂ with maximum obtained bandgaps under respective optimum strains were assessed through the HSE06 method of calculation for better estimation of band gaps and optical properties. Prior to HSE calculations, we affirmed our assessment for the stability and reliability of the compounds under uniaxial and biaxial strains of up to 15% through phonon spectrum and elastic calculations. A distinct transition was also noted from semiconductor to metal for all compounds after the applied optimum uniaxial and biaxial strains. The optical absorption spectra in all the stretched penta-MP₂ compounds reached the order of 10⁶ cm^-1, with significant peaks belonging to the IR and visible regions; this indicates promising applications of these materials in high-performance solar energy and good hot mirror materials. The enhanced I-V responses under uniaxial and biaxial tensile strains using the non-equilibrium Green's function (NEGF) approach confirm the usefulness of the strained state of the considered penta-MP₂ monolayers. The results show that tuning electronic properties, I-V characteristics and optical properties of stretched penta-MP₂ compounds under tensile strain merits significant future applications in optoelectronic devices and as good hot mirror materials.