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Domain wall motion driven by a wide range of current in coupled soft/hard ferromagnetic nanowires
Ziyang Yu1, Bin Gong1, Lun Xiong1
1Hubei Key Laboratory of Optical Information and Pattern Recognition, School of Optical Information and Energy Engineering, Wuhan Institute of Technology Wuhan 430205 P. R. China xionglun@wit.edu.cn.
Abstract:
Racetrack memory with the advantages of small size and high reading speed is proposed based on current-induced domain wall (DW) motion in a ferromagnetic (FM) nanowire. Walker breakdown that restricts the enhancement of DW velocity in a single FM nanowire can be depressed by inter-wire magnetostatic coupling in a double FM nanowire system. However, this magnetostatic coupling also limits the working current density in a small range. In the present work, based on micromagnetic calculation, we have found that when there is a moderate difference of magnetic anisotropy constant between two FM nanowires, the critical current density for triggering the DW motion can be reduced while that for breaking the inter-wire coupling can be enhanced significantly to a magnitude of 1013 A m-2, which is far above the working current density in current electronic devices. The manipulation of working current density is relevant to the modification of DW structure and inter-wire magnetostatic coupling due to the difference of the anisotropy constants between the two nanowires and paves a way to develop racetrack memory that can work in a wide range of current.
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