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Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO

Yu-Jin Hwang1, Do-Kyung Kim1, Sang-Hwa Jeon1

  • 1School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea.

Nanomaterials (Basel, Switzerland)
|September 23, 2022
PubMed

Keywords:
bias stabilityelectrical characteristicssolution processstructural relaxationthin-film transistorzinc–tin oxide

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