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3D Simulation, Electrical Characteristics and Customized Manufacturing Method for a Hemispherical Electrode Detector.

Manwen Liu1, Wenzheng Cheng1,2, Zheng Li3,4

  • 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

Sensors (Basel, Switzerland)
|September 23, 2022
PubMed
Summary

A novel hemispherical electrode detector, manufacturable with CMOS technology, demonstrates excellent electrical properties and radiation hardness. This design overcomes limitations of previous spherical detectors, enabling practical applications.

Keywords:
3D hemispherical electrode silicon detectorcharge collection efficiencycustomized manufacturing methodfull depletion voltageradiation hardnessultra-low capacitance

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Area of Science:

  • Semiconductor device physics
  • Radiation detection technology
  • Microelectronics fabrication

Background:

  • Previous theoretical work proposed a spherical electrode detector with superior electrical characteristics.
  • Technological limitations prevented the fabrication of spherical detectors.
  • Existing CMOS technology necessitates a new detector geometry for practical realization.

Purpose of the Study:

  • To propose and investigate a hemispherical electrode detector compatible with CMOS technology.
  • To simulate and analyze the device's electrical characteristics and radiation hardness.
  • To develop and validate a feasible manufacturing method for the proposed detector.

Main Methods:

  • 3D modeling and TCAD (Technology Computer-Aided Design) simulations for potential, electric field, and carrier concentration distribution.
  • Electrical characteristic analysis (I-V, C-V, induced current, charge collection efficiency) under varying radiation fluences.
  • TCAD-SPROCESS simulation for a customized multi-step manufacturing process, optimizing deep trench aspect ratios and ion implantation parameters.

Main Results:

  • Simulations predict favorable electrical properties for the hemispherical detector.
  • The device exhibits promising charge collection efficiency (CCE) and radiation hardness.
  • The proposed manufacturing process simulation demonstrates feasibility for fabricating the near-hemispherical electrode connection.

Conclusions:

  • The hemispherical electrode detector offers a viable alternative to spherical designs, leveraging existing CMOS fabrication.
  • The device shows potential for high-performance radiation detection applications.
  • The developed manufacturing process is validated through simulation, paving the way for experimental realization.