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GaAs membrane PhC lasers threshold reduction using AlGaAs barriers and improved processing
Sergio Iván Flores Esparza1, Aurélie Lecestre1, Pascal Dubreuil1
1LAAS-CNRS, Université de Toulouse, CNRS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France.
Nanotechnology
|September 30, 2022
Summary
Adding aluminum gallium arsenide (AlGaAs) barriers to suspended membranes reduces carrier recombination and lowers laser thresholds. This study also reviews photonic crystal membrane fabrication defects and proposes solutions.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Active suspended membranes serve as platforms for novel laser research.
- Carrier non-radiative recombination is a key factor limiting laser performance.
Purpose of the Study:
- To investigate the impact of AlGaAs barriers on carrier recombination in suspended membranes.
- To reduce the threshold of photonic crystal lasers.
- To address fabrication defects in photonic crystal membranes.
Main Methods:
- Incorporation of thin AlGaAs barrier layers near Air/GaAs interfaces.
- Fabrication of photonic crystal membranes.
- Literature review of fabrication-induced defects.
Main Results:
- Significant reduction in carrier non-radiative recombination.
- Decreased threshold in test photonic crystal lasers.
- Identification of common fabrication defects and their origins.
Conclusions:
- AlGaAs barriers effectively enhance the performance of suspended membrane lasers.
- A comprehensive fabrication scheme is proposed to mitigate defects, improving device yield and reliability.
