Related Experiment Video
Updated: Aug 27, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
GaAs membrane PhC lasers threshold reduction using AlGaAs barriers and improved processing
Sergio Iván Flores Esparza1, Aurélie Lecestre1, Pascal Dubreuil1
1LAAS-CNRS, Université de Toulouse, CNRS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France.
Abstract:
Active suspended membranes are an ideal test-bench for experimenting with novel laser geometries and principles. We show that adding thin AlGaAs barrier near the top and bottom Air/GaAs interfaces of the membrane significantly reduces the carriers non-radiative recombinations and decreases the threshold of test photonic crystal test lasers. We review the existing literature on photonic crystal membrane fabrication and propose an overview of the significant defects that can be induced by each fabrication step. Finally we propose a complete processing scheme that overcome most of these defects.

