Related Experiment Video
Updated: Aug 27, 2025

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Injection-limited and space charge-limited currents in organic semiconductor devices with nanopatterned metal
Janek Buhl1,2, Hannes Lüder1,2, Martina Gerken1,2
1Chair for Integrated Systems and Photonics, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel, Germany.
Abstract:
Charge injection at metal-organic interfaces often limits the electric current in organic light-emitting diodes without additional injection layers. Integrated nanopatterned electrodes may provide a way to overcome this current injection limit by local field enhancements leading to locally space charge-limited currents. We compare electrical characteristics of planar and nanopatterned hole-only devices based on the charge transport material NPB with different thicknesses in order to investigate the nanopattern's effect on the current limitation mechanism. Integration of a periodic nanograting into the metal electrode yields a current increase of about 1.5-4 times, depending on thickness and operating voltage. To verify the experimental results, we implement a finite element simulation model that solves the coupled Poisson and drift-diffusion equations in a weak form. It includes space charges, drift and diffusion currents, nonlinear mobility, and charge injection at the boundaries. We find in experiment and simulation that the planar devices exhibit injection-limited currents, whereas the currents in the nanopatterned devices are dominated by space charge effects, overcoming the planar injection limit. The simulations show space charge accumulations at the corners of the nanopattern, confirming the idea of locally space charge-limited currents.
More Related Videos
08:29Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer
Published on: January 10, 2017
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by: