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Updated: Aug 26, 2025

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity
Published on: March 6, 2017
Photogenerated carrier dynamics at the B4C3/g-C3N4 interface
Xianke Yue1, Hong-Yao Liu1, Yujun Zheng1
1School of Physics, Shandong University, Jinan 250100, People's Republic of China. yzheng@sdu.edu.cn.
Abstract:
Developing van der Waals (vdW) heterostructures is an excellent approach for optimizing exceptional optoelectronic and photocatalytic properties of materials; therefore, researching the interface dynamics of charge carriers at the two-dimensional vdW heterojunction is of great significance. In this work, we perform time-dependent ab initio non-adiabatic molecular dynamics simulations to study the dynamics of charge transfer at the B4C3/g-C3N4 heterostructure. The simulations show that the charge transfer between B4C3/g-C3N4 layers is mainly caused by the non-adiabatic mechanism. The non-adiabatic mechanism leads to a higher charge-transfer efficiency and slows down the process of interlayer electron-hole recombination, thereby promoting the separation of photogenerated electron-hole pairs. Our investigation provides essential insights into understanding the dynamics of charge transfer for the B4C3/g-C3N4 heterostructure, which provides guidance for photocatalytic water splitting and optoelectrical applications.
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