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Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses
Jingtao Zhao1,2, Quanyou Chen3, Chaoyang Chen1,2
1Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, 621900, China.
Scientific Reports
|October 8, 2022
Summary
Researchers observed a new interference phenomenon in gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifiers. Deep traps within the GaN HEMT device cause this millisecond-duration interference when exposed to microwave pulses.
Area of Science:
- Electrical Engineering
- Materials Science
- Physics
Background:
- The increasing complexity of the electromagnetic environment impacts electronic systems.
- Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are crucial in modern power amplifiers.
Purpose of the Study:
- To investigate a novel interference phenomenon in GaN HEMT power amplifiers.
- To understand the relationship between reverse-injected microwave pulse characteristics and interference effects.
Main Methods:
- Effect experiments were conducted to analyze interference.
- Microwave pulses were injected into GaN HEMT power amplifiers via the output port.
Main Results:
- A new interference phenomenon was observed in GaN HEMT power amplifiers.
- Interference duration was found to reach millisecond magnitudes.
- The peak power of reverse-injected microwave pulses directly influences interference duration and amplitude.
Conclusions:
- Deep traps within GaN HEMT power amplifiers are identified as the root cause of the observed interference.
- Understanding this phenomenon is critical for designing robust electronic systems in complex electromagnetic environments.
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