Crack barriers for thick SiN using dicing
Abstract:
Silicon nitride (SiN) waveguides need to be thick to show low dispersion which is desired for nonlinear applications. However, high quality thick SiN produced by chemical vapour deposition (CVD) contains high internal stress, causing it to crack. Crack-free wafers with thick SiN can be produced by adding crack barriers. We demonstrate the use of dicing trenches as a simple single-step method to produce high quality (loss<0.5 dB/cm) crack-free SiN. We show Kerr-comb generation in a ring resonator to highlight the high quality and low dispersion of the waveguides.
More Related Videos
08:02Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
Published on: February 11, 2020
09:12Production of Single Tracks of Ti-6Al-4V by Directed Energy Deposition to Determine the Layer Thickness for Multilayer Deposition
Published on: March 13, 2018
Related Concept Videos
01:08Brick Cutting Techniques
Cut bricks are categorized by size. Bricks cut to half their original length are called half-bats, while those cut to three-fourths their length are known as three-fourth bats.
Special types of...
01:22Design Example: Distributing Reinforcements in Concrete Sections