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Updated: Aug 26, 2025

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes
Published on: May 23, 2017
Miniaturizing a Chip-Scale Spectrometer Using Local Strain Engineering and Total-Variation Regularized Reconstruction
Tuba Sarwar1, Can Yaras1, Xiang Li1
1Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan48109-2122, United States.
Abstract:
A wafer-thin chip-scale portable spectrometer suitable for wearable applications based on a reconstructive algorithm was demonstrated. A total of 16 spectral encoders that simultaneously functioned as photodetectors were monolithically integrated on a chip area of 0.16 mm2 by applying local strain engineering in compressively strained InGaN/GaN multiple quantum well heterostructures. The built-in GaN pn junction enabled a direct photocurrent measurement. A non-negative least-squares (NNLS) algorithm with total-variation regularization and a choice of a proper kernel function was shown to deliver a decent spectral reconstruction performance in the wavelength range of 400-645 nm. The accuracies of spectral peak positions and intensity ratios between peaks were found to be 0.97% and 10.4%, respectively. No external optics, such as collimation optics and apertures, were used, enabled by angle-insensitive light-harvesting structures, including an array of cone-shaped backreflectors fabricated on the underside of the sapphire substrate.
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