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NiN-Passivated NiO Hole-Transport Layer Improves Halide Perovskite-Based Solar Cell
Anat Itzhak1, Xu He2, Adi Kama1
1Department of Chemistry and Bar-Ilan Institute for Nanotechnology & Advanced Materials, Bar-Ilan University, Ramat Gan5290002, Israel.
ACS Applied Materials & Interfaces
|October 13, 2022
Summary
A novel nickel nitride (NiN) layer enhances perovskite solar cell (PSC) stability and efficiency by protecting the nickel oxide (NiO) hole-transport layer. This method improves average PSC efficiency to 19% and boosts device longevity.
Area of Science:
- Materials Science
- Renewable Energy
- Nanotechnology
Background:
- Interfaces between inorganic selective contacts and halide perovskites (HaPs) are critical for stable and reproducible solar cells.
- Nickel oxide (NiO) is a promising hole-transport layer for HaP solar cells due to its stability, low cost, and suitable electronic structure.
- Scalable fabrication of HaP-based solar cells (PSCs) using vacuum deposition methods is hindered by interface control issues.
Purpose of the Study:
- To improve the stability and efficiency of PSCs by addressing the challenges at the NiO/HaP interface.
- To investigate the protective and passivating effects of a novel nickel nitride (NiN) layer deposited via RF sputtering.
- To enable scalable, solvent-free, vacuum-deposited PSC fabrication.
Main Methods:
- Fabrication of NiO using RF sputtering.
- Deposition of a NiN layer onto NiO without breaking vacuum.
- Characterization of the NiN layer's protective effect on NiO conductivity during Ar plasma exposure.
- Evaluation of the NiN layer's interface passivation capabilities between NiO and HaPs.
- Fabrication and testing of PSC devices with and without the NiN layer.
Main Results:
- The NiN layer effectively prevented the reduction of Ni3+ to Ni2+ in NiO by Ar plasma, preserving its conductivity.
- The NiN layer successfully passivated the NiO/HaP interface, enhancing PSC stability.
- PSC efficiency increased from an average of 16.5% (17.4% record) to 19% (19.8% record) with the NiN layer.
- Device stability was significantly improved by the incorporation of the NiN layer.
Conclusions:
- The NiN layer provides a dual protective mechanism for NiO, maintaining conductivity and passivating the interface.
- This approach offers a viable strategy for developing stable, efficient, and scalable PSCs using vacuum deposition.
- The developed method addresses a key challenge in HaP solar cell technology, paving the way for commercialization.
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