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A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching

Shengnan Zhu1, Tianshi Liu1, Junchong Fan1

  • 1Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA.

Materials (Basel, Switzerland)
|October 14, 2022
PubMed

Keywords:
SiC power MOSFETcell topologydodecagonal cellgate-to-drain capacitance (Cgd)high-frequency figure of merit (HF-FOM)octagonal cellspecific ON-resistance (Ron,sp)switching performance

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