Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Characteristics of MOSFET01:17

Characteristics of MOSFET

474
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
474
MOSFET01:16

MOSFET

553
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
553
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

449
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
449
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

691
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
691
The Hall Effect01:30

The Hall Effect

2.6K
Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
2.6K
Carrier Transport01:21

Carrier Transport

533
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
533

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Electrode-Assisted Switching in Memristors Based on Single-Crystal Transition Metal Dichalcogenides.

ACS applied materials & interfaces·2025
Same author

The Effect of Obesity on Postoperative Analgesia Practices and Complications Following Endoscopic Sinus Surgery: A Propensity Score-Matched Cohort Study.

The Annals of otology, rhinology, and laryngology·2024
Same author

Antimicrobial Prescription Patterns for Acute Sinusitis 2015-2022: A Comparison to Published Guidelines.

American journal of rhinology & allergy·2024
Same author

The utility and accuracy of ChatGPT in providing post-operative instructions following tonsillectomy: A pilot study.

International journal of pediatric otorhinolaryngology·2024
Same author

Clinical Conundrum: An Unusual Case of Persistent Dyspnea and Eructation.

Dysphagia·2023
Same author

Clinical Indications of Cultured Epithelial Autografts.

Annals of plastic surgery·2023

Related Experiment Video

Updated: Aug 25, 2025

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
07:38

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

Published on: April 18, 2019

31.5K

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis.

Suman Das1, Yongju Zheng1,2, Ayayi Ahyi1

  • 1Department of Physics, Auburn University, Auburn, AL 36849, USA.

Materials (Basel, Switzerland)
|October 14, 2022
PubMed
Summary

Scattering significantly impacts 4H-SiC MOSFETs. This study identifies dominant scattering mechanisms for electrons and holes, revealing their dependence on electric fields and temperature for improved device performance.

Keywords:
4H-SiC MOSFETHall measurementsbody biasnitridationscatteringtransverse electric field

More Related Videos

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide
09:41

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide

Published on: May 23, 2025

225
Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
10:36

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

10.7K

Related Experiment Videos

Last Updated: Aug 25, 2025

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
07:38

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

Published on: April 18, 2019

31.5K
Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide
09:41

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide

Published on: May 23, 2025

225
Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
10:36

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

10.7K

Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Electrical Engineering

Background:

  • Channel conduction in 4H-SiC MOSFETs is limited by interface charge trapping and scattering.
  • Nitridation reduces interface traps, but scattering remains a key factor increasing channel resistance.

Purpose of the Study:

  • To distinguish dominant scattering mechanisms for inversion layer electrons and holes in nitrided 4H-SiC MOSFETs.
  • To analyze the effect of transverse electric field (Eeff) on carrier mobility, particularly surface roughness scattering.
  • To understand the influence of phonon scattering in both n-channel and p-channel devices.

Main Methods:

  • Temperature and body-bias-dependent Hall measurements were performed on nitrided lateral 4H-SiC MOSFETs.
  • Analysis of carrier mobility under varying transverse electric fields (Eeff) in strong inversion.
  • Investigation of scattering mechanisms under different body bias conditions.

Main Results:

  • Power law dependencies for surface roughness scattering were determined: Eeff-1.8 for electrons and Eeff-2.4 for holes.
  • Phonon scattering was observed in n-channel MOSFETs at zero body bias and in p-channel MOSFETs under negative body bias.
  • Identified distinct scattering regimes governing carrier mobility.

Conclusions:

  • Surface roughness and phonon scattering are critical mechanisms affecting carrier mobility in 4H-SiC MOSFETs.
  • Substrate doping and transverse electric field (Eeff) are crucial parameters for controlling channel mobility.
  • The findings provide insights for optimizing 4H-SiC MOSFET design and performance.