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Updated: Aug 25, 2025

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
Published on: April 16, 2017
Regulation of Thermal Emission Position in Biased Graphene
Yansong Fan1, Zhengzhuo Zhang1, Zhihong Zhu1
1College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China.
Abstract:
A very attractive advantage of graphene is that its Fermi level can be regulated by electrostatic bias doping. It is of great significance to investigate and control the spatial location of graphene emission for graphene thermal emitters, in addition to tuning the emission intensity and emission spectrum. Here, we present a detailed theoretical model to describe the graphene emission characteristics versus gate voltages. The experimentally observed movement of the emission spot and temperature distribution of graphene emitters are basically in agreement with those from the theoretical model. Our results provide a simple method to predict the behavior of graphene emitters that is beneficial for achieving the spatial dynamic regulation of graphene infrared emission arrays.
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