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Green edge emitting lasers with porous GaN cladding.
Optics Express
|October 14, 2022
Summary
Researchers developed green-emitting Gallium Nitride (GaN) lasers using nano-porous GaN cladding. Despite challenges with efficiency and current density, continuous wave operation improved spectral properties and emission.
Area of Science:
- Optoelectronics
- Materials Science
- Semiconductor Physics
Background:
- Gallium Nitride (GaN) based lasers are crucial for optoelectronic applications.
- Achieving efficient green emission from GaN lasers remains a significant challenge.
- Novel materials and device structures are needed to overcome current limitations.
Purpose of the Study:
- To fabricate GaN lasers emitting at a green wavelength (510 nm).
- To investigate the performance limitations including slope efficiency and threshold current density.
- To analyze the impact of nano-porous GaN cladding on laser characteristics.
Main Methods:
- Fabrication of GaN lasers utilizing nano-porous GaN cladding.
- Pulsed and continuous wave (CW) electrical injection characterization.
- Analysis using variable stripe length and segmented contact methods.
- Spectroscopic analysis to evaluate emission properties.
Main Results:
- Successful fabrication of GaN lasers with green emission at 510 nm.
- Observed low slope efficiency (0.13 W/A) and high threshold current density (14 kA/cm²).
- Identified poor injection efficiency and high optical loss as primary limiting factors.
- CW operation resulted in narrowed spectra and enhanced spontaneous emission.
Conclusions:
- Nano-porous GaN cladding is a viable approach for green GaN laser fabrication.
- Further optimization is required to improve injection efficiency and reduce optical losses.
- Continuous wave operation demonstrates potential for enhanced spectral control and emission characteristics.
