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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

316
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
316

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Terahertz difference-frequency-generation quantum cascade lasers on silicon with wire grid current injectors.

Jae Hyun Kim, Wolfhard Oberhausen, Seungyong Jung

    Optics Express
    |October 14, 2022
    PubMed
    Summary

    We developed novel terahertz quantum cascade laser sources using Cherenkov-based difference-frequency generation on silicon. This design enhances terahertz radiation transmission and allows efficient current injection.

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    Area of Science:

    • Optics and Photonics
    • Semiconductor Devices
    • Quantum Electronics

    Background:

    • Terahertz (THz) quantum cascade lasers (QCLs) are crucial for various applications.
    • Efficient coupling of THz radiation from QCLs into substrates remains a challenge.
    • Intra-cavity difference-frequency generation (DFG) offers a pathway for THz generation.

    Purpose of the Study:

    • To propose and experimentally validate a novel THz QCL source.
    • To integrate intra-cavity Cherenkov difference-frequency generation (CDFG) with a silicon substrate.
    • To optimize current injection and THz output coupling.

    Main Methods:

    • Fabrication of THz QCLs on a silicon substrate.
    • Implementation of a metal wire grid as a current injection layer.
    • Experimental verification of CDFG operation and THz emission.
    • Characterization of TM-polarized THz radiation transmission.

    Main Results:

    • Successful demonstration of THz QCLs based on intra-cavity CDFG.
    • The metal wire grid injector achieved high transmission of TM-polarized THz radiation.
    • The configuration provided a low-resistivity contact for efficient current injection.
    • Operation was verified on a silicon substrate.

    Conclusions:

    • The proposed THz QCL design with a wire grid injector is effective.
    • This approach enhances THz output coupling into silicon substrates.
    • The technology holds promise for integrated THz photonic devices.