Ultralow-level all-optical self-switching in a nanostructured moiré superlattice

We report an all-optical self-switching performed at an ultralow-level of intensity in a nanostructured moiré superlattice on a silicon platform. The moiré superlattice was formed by twisting two sets of triangular lattices in a silicon membrane in the same layer with a twist angle of 9.43°. The near flatband was formed, and the electric field was well confined in the center of the superlattice, which enabled all-optical switching under an ultralow intensity when the Kerr nonlinearity of silicon was considered. The intensity, which was reduced to 300 W/m² and even 20 W/m², can cause the transmittance of the nanostructure to change from 0 to 80% under x- and y-polarized pump light, respectively, and could be further decreased by optimizing the nanostructure or nonlinear materials. The results indicate that moiré superlattices fabricated from nonlinear materials are promising for integrated all-optical devices.