Wafer-scale ultra-broadband perfect absorber based on ultrathin Al-SiO₂ stack metasurfaces

Broadband absorbers with high absorption, ultrathin thickness, and lithography-free planar structure have a wide range of potential applications, such as clocking and solar energy harvesting. For plasmonic metal materials, achieving perfect ultra-broadband absorption remains a challenge owing to the intrinsically narrow bandwidth. In this study, wafer-scale Al-SiO₂ stack metasurfaces were experimentally fabricated to realize perfect ultra-broadband absorption. The experimental results show that the absorption for Al-SiO₂ stack metasurfaces can reach up to 98% for the wavelength range from the ultraviolet to the near-infrared (350-1400 nm). It was experimentally verified that the absorption performance of Al-SiO₂ stack metasurfaces is dependent on the layer number and is superior to that of other metal-based stack metasurfaces. This study will pave the way for development of plasmonic metal-based ultra-broadband absorbers as in low cost and high performance robust solar energy devices.