Exploiting total internal reflection geometry for deep broadband terahertz modulation using a GaAs Schottky diode...

We developed a GaAs Schottky diode with integrated periodic subwavelength metal microslits with total internal reflection (TIR) geometry to achieve deep broadband THz modulation at high frequency with low insertion loss. The non-resonant electric field enhancement effect in the subwavelength microslits intensifies the evanescent wave in TIR, which increases broadband absorbance of THz light signals by free carriers in the GaAs Schottky diode. Devices with various microslit spatial periods and gap widths were fabricated and measured. Among the devices, that with a microslit period of 10 µm and gap width of 2 µm produced ∼70% modulation depth at frequencies of 0.2 to 1.2 THz, while in the range of 0.25 to 0.4 THz, ∼90% modulation depth was achieved. By encapsulating the device in high refractive index material, ∼100% modulation depth was achieved in the range of 0.4 to 0.6 THz, the 3 dB bandwidth operational frequency was ∼160 kHz, and the insertion loss introduced by the device was less than 8 dB, which is much lower than existing metasurface-based THz modulators. In general, our first-generation device has improved modulation depth, operational bandwidth, insertion loss, and operational frequency. Optimization of the metal microslits, TIR geometry, and doped layer could further improve the performance of our design.