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80Gb/s NRZ Ge waveguide electro-absorption modulator.

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    This study presents a Germanium electro-absorption modulator (EAM) achieving over 80 Gbps data rates. An annealing process enhances the EAM

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    Area of Science:

    • Optoelectronics
    • Materials Science
    • Photonics

    Background:

    • High-speed optical modulators are crucial for modern communication networks.
    • Germanium-based devices offer potential for cost-effective and high-performance optoelectronic solutions.

    Purpose of the Study:

    • To demonstrate a high-performance Germanium electro-absorption modulator (EAM) for optical communication.
    • To investigate the impact of post-CMP annealing on EAM performance.
    • To evaluate the device's capabilities as both a modulator and a photodetector.

    Main Methods:

    • Fabrication of a Germanium EAM.
    • Characterization of electro-optical bandwidth using 3 dB measurements.
    • Eye diagram analysis for data rate assessment with non-return-to-zero on-off keying (NRZ-OOK) modulation.
    • Comparative analysis of devices with and without post-chemical mechanical polishing (CMP) annealing.
    • Evaluation of photodetector (PD) performance in C and L communication bands.

    Main Results:

    • Achieved a 3 dB electro-optical bandwidth exceeding 67 GHz at -3 V bias.
    • Demonstrated data rates over 80 Gbps for NRZ-OOK modulation.
    • Post-CMP annealing increased the mean static extinction ratio from 7.27 dB to 11.83 dB.
    • Reported dynamic power consumption of 6.348 fJ/bit.
    • Exhibited excellent photodetector performance with responsivity of 1.04 A/W at 1610 nm and opto-electric bandwidth over 43 GHz.

    Conclusions:

    • The demonstrated Germanium EAM offers high speed and manufacturability.
    • Post-CMP annealing is a viable process to enhance EAM performance.
    • The device shows dual functionality as a high-performance modulator and photodetector.