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Updated: Aug 25, 2025

Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light
Published on: September 12, 2014
Recent Advances and Challenges in Light Conversion Phosphor Materials for Third-Generation Quantum-Dot-Sensitized
Ramkumar Sekar1, Arrthi Ravitchandiran1, Subramania Angaiah1
1Electro-Materials Research Laboratory, Centre for Nanoscience and Technology, Pondicherry University, Puducherry 605014, India.
Abstract:
Photovoltaic (PV) technologies have received tremendous attention for producing clean and renewable energy from the Sun. Third-generation quantum-dot-sensitized solar cells (QDSCs) present promising alternatives to conventional silicon solar cells due to their unique properties such as simplicity in fabrication, lower processing temperature, high flexibility, semitransparent nature, and a theoretical conversion efficiency of up to 44%. However, the light-harvesting QD materials used in these SCs allow for the absorption of a small portion (from 300 to 800 nm) of the solar spectrum due to their narrow band gap. The nonabsorption of UV and near-infrared (NIR) light limits the power conversion efficiency (PCE) of these SCs. Hence, a PV technique that efficiently uses the entire solar spectrum becomes essential. The incorporation of light conversion phosphor materials (LCs) in QDSCs is a promising technology to absorb the whole part of the solar spectrum and enhance the PCE of these SCs. This review presents an overview of the advantages and limitations of QDSCs, different types of lanthanide-based light conversion phosphor materials, their synthesis and light conversion mechanism, and their influence on QDSCs.
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