High-Performance UV-Vis Broad-Spectra Photodetector Based on a β-Ga2O3/Au/MAPbBr3 Sandwich Structure
Weiqiang Gong1, Jun Yan1, Feng Gao1
1Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin150025, China.
ACS Applied Materials & Interfaces
|October 17, 2022
Summary
A novel UV-vis photodetector using beta-gallium oxide and perovskite enhances detection in both ultraviolet and visible light. This self-powered device offers superior performance for imaging applications without external power.
Area of Science:
- Optoelectronics
- Materials Science
- Semiconductor Physics
Background:
- UV-vis photodetectors (PDs) are crucial for military and civilian applications.
- Achieving high detection performance in the UV spectrum, especially solar-blind range, remains challenging for current UV-vis PDs.
- This limitation hinders the practical use of broad-spectrum photodetectors.
Purpose of the Study:
- To design and fabricate a UV-vis photodetector with enhanced performance in both UV and visible light regions.
- To investigate the optoelectronic properties of a novel device structure.
- To explore the potential for self-powered imaging applications.
Main Methods:
- Fabrication of a simple sandwich structure photodetector (SSPD) using beta-gallium oxide (β-Ga2O3), gold (Au) electrodes, and methylammonium lead bromide (MAPbBr3) perovskite.
- Characterization of the optoelectronic performance of the SSPD, including responsivity measurements at different wavelengths (240 nm and 520 nm) under an applied bias.
- Analysis of the device structure and interface properties to understand the enhanced performance, including carrier recombination suppression and charge separation.
- Investigation of the self-powered response by forming a type-II heterojunction between β-Ga2O3 and MAPbBr3.
Main Results:
- The fabricated β-Ga2O3/Au/MAPbBr3 SSPD demonstrated significantly enhanced responsivity compared to a standard metal-semiconductor-metal (MSM) structure MAPbBr3 PD.
- Specific responsivities of 0.47 A W⁻¹ at 240 nm and 1.43 A W⁻¹ at 520 nm were achieved under a 6 V bias, representing an 8.5 and 23-fold increase, respectively.
- The enhanced performance is attributed to effective suppression of carrier recombination via efficient interface charge separation.
- A self-powered response was achieved due to the formation of a type-II heterojunction, enabling photo-imaging without external power.
Conclusions:
- The developed β-Ga2O3/Au/MAPbBr3 SSPD offers a simple and effective approach for high-performance UV-vis detection.
- The device exhibits superior optoelectronic performance and self-powered imaging capabilities.
- This work paves the way for advanced self-powered photodetectors for UV-visible applications.
