Design of compact dual-mode photoelectric modulator with high process tolerance based on vanadium dioxide

Opto-electro modulators with nanometer-scale footprint are indispensable in integrated photonic electronic circuits. Due to weak light-matter interactions and limits of micro-nano fabrication technology, it is challenging to shrink a modulator to subwavelength size. In recent years, hybrid modulators based on surface plasmons have been proposed to solve this problem. Although the introduced high lossy surface plasmons provide large modulation depth, the polarization selectivity limits its application. Toward this end, in this paper, we present a design of an ultra-compact vanadium oxide (VO₂)-based plasmonic waveguide modulator for both transverse electric (TE) and transverse magnetic (TM) modes. The device consists of two silicon tapers and a silicon waveguide embedded with a VO₂ wedge. When electrical signals put on the device change the phase of VO₂ from a metal to an insulator, the output optical signals along the waveguide are significantly modulated. For a 1.5 µm length modulator operating at 1.55 µm wavelength, the extinction ratio is 11.62 dB for the TE mode and 8.86 dB for the TM mode, while the insertion loss is 4.31 dB for the TE mode and 4.12 dB for the TM mode. Furthermore, the proposed design has excellent tolerance for fabrication process error, which greatly increases the yield rate of products and indicates a promotable application prospect.