Internal structuring of gallium arsenide using short laser pulses

Laser writing inside semiconductors attracts attention as a possible route for three-dimensional integration in advanced micro technologies. In this context, gallium arsenide (GaAs) is a material for which the best conditions for laser internal modification (LIM) have not been established yet. We address this question by using laser pulses at a fixed wavelength of 1550-nm. A large parameter space is investigated including the response to the applied pulse energy, pulse duration (from femtosecond to nanosecond) and the focusing conditions. We report that well-defined and reproducible internal modifications are achievable with tightly focused nanosecond pulses. The measured writing thresholds are systematically compared to those obtained in silicon (Si), a more extensively studied material. In comparison to Si, we also observe that GaAs is more prone to filamentation effects affecting the modification responses. The reported specific observations for LIM of GaAs should facilitate the future process developments for applications in electronics or photonics.