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Low-κ, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings.

Joan Manel Ramirez, Amin Souleiman, Pierre Fanneau de la Horie

|October 19, 2022

Summary

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We developed a new III-V-on-silicon photonic laser. This advanced laser offers high performance for optical communication systems.

Area of Science:

Photonics
Semiconductor Lasers
Integrated Optics

Background:

Heterogeneously integrated lasers are crucial for advanced optical communication.
Silicon photonics offers a scalable platform for photonic integrated circuits.

Purpose of the Study:

To demonstrate a high-performance III-V-on-silicon distributed feedback laser.
To characterize its static and dynamic performance for data transmission.

Main Methods:

Fabrication of a III-V-on-SOI distributed feedback laser.
Measurement of laser linewidth, side-mode suppression ratio, output power, and wall-plug efficiency.
Evaluation of dynamic characteristics including modulation bandwidth and eye diagram measurements.

Main Results:

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Related Experiment Videos

Last Updated: Aug 25, 2025

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Achieved a narrow linewidth of 118 kHz and side-mode suppression ratio > 45 dB.
Obtained 22 mW output power with 17% wall-plug efficiency.
Demonstrated 14 GHz modulation bandwidth, 8 ps photon lifetime, and open eye diagrams up to 25 Gb/s.

Conclusions:

The III-V-on-SOI DFB laser exhibits excellent performance metrics.
This laser is suitable for high-speed optical communication applications.
Heterogeneous integration provides a viable path for advanced photonic devices.