Related Experiment Video
Updated: Aug 25, 2025
Stimulated Stokes and Antistokes Raman Scattering in Microspherical Whispering Gallery Mode Resonators
Published on: April 4, 2016
Ultralow Threshold Lasing from a Continuous-Wave-Pumped SiN/CsPbBr3/Ag Thin Film Mediated by the Whispering Gallery
Zhenxu Lin1, Rui Huang2, Shulei Li3
1Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou510006, China.
Abstract:
Thin-film pervoskite lasers driven by a continuous wave (CW) laser with ultralow thresholds, which is crucial for the development of on-chip electrically driven lasers, have not yet been realized owing to the low excitation power density of the CW laser. Here, we reported the CW-laser-pumped lasing from a thin film of CsPbBr3 quantum dots (QDs) sandwiched by a SiN and a Ag thin film and mediated by the whispering gallery modes of a SiO2 microsphere. The stable photoluminescence from CsPbBr3 QDs with a quantum efficiency of ∼45% is realized by encapsulating with a thin SiN film. Upon CW-laser pumping, lasing from the whispering gallery modes with a threshold of ∼11.6 W/cm2 is successfully demonstrated at room temperature. The strong localization of electric field achieved in the particle-on-film system, which is revealed in the numerical simulations and lifetime measurements, plays a crucial role in the realization of the ultralow threshold lasing. Our findings open a new avenue for designing photostable CW-laser-pumped pervoskite lasers.
