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Published on: June 7, 2018
Braiding Lateral Morphotropic Grain Boundaries in Homogenetic Oxides
Shengru Chen1,2, Qinghua Zhang1, Dongke Rong1
1Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Researchers created novel oxide interfaces using morphotropic grain boundaries (GBs) in cobaltite homostructures. This scalable method enables engineered electronic and magnetic properties for advanced applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Correlated oxide interfaces are key to emergent phenomena and quantum states.
- Fabricating oxide interfaces with controlled in-plane crystallographic orientations and strain states is challenging using conventional methods.
Purpose of the Study:
- To develop a novel method for creating oxide interfaces with laterally varied properties.
- To engineer artificial functionalities in planar oxide matrices.
Main Methods:
- Fabrication of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures.
- Utilizing single-crystalline substrates and suspended ultrathin freestanding membranes for controlled epitaxy and growth orientation.
- Achieving seamless and atomically sharp GBs.
Main Results:
- Lateral modulation and isolation of electronic states and magnetic behavior by GBs.
- Creation of hybrid structures with artificially engineered functionalities.
- Demonstration of a simple and scalable fabrication method.
Conclusions:
- The developed method allows for unprecedented interface engineering in oxide materials.
- These innovative interfaces provide a platform for exploring applications in neuromorphics, solid-state batteries, and catalysis.
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