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Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

871
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Fermi Level Dynamics01:12

Fermi Level Dynamics

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The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
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Efficient solid-state infrared-to-visible photon upconversion on atomically thin monolayer semiconductors.

Jiaru Duan1,2, Yanping Liu1,2, Yongqing Zhang3

  • 1State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China.

Science Advances
|October 26, 2022
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Summary
This summary is machine-generated.

Researchers developed an ultrathin film using 2D monolayer semiconductors for efficient near-infrared (NIR)-to-visible light upconversion. This novel approach overcomes limitations of previous methods, offering a promising pathway for advanced optical applications.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • Solid-state upconversion converts infrared light to visible light, crucial for photovoltaics, photodetection, and bioimaging.
  • Existing molecular sensitizers face limitations, while inorganic semiconductors show promise but often suffer from low efficiency and toxicity.
  • Near-infrared (NIR)-to-visible upconversion is a key area for technological advancement.

Purpose of the Study:

  • To develop a highly efficient and non-toxic NIR-to-visible upconversion system.
  • To explore the potential of atomically thin two-dimensional (2D) monolayer semiconductors for upconversion applications.
  • To investigate the impact of material architecture on upconversion efficiency.

Main Methods:

  • Fabrication of an ultrathin bilayer film using atomically thin 2D monolayer semiconductors.
  • Characterization of the film's optical properties and upconversion performance.
  • Investigation of the relationship between layer thickness and upconversion emission intensity.

Main Results:

  • Achieved robust NIR-to-visible emission with a high upconversion quantum yield of 1.1 ± 0.2%.
  • Demonstrated ultrafast energy transfer due to the atomic flatness and strong light absorption of 2D materials.
  • Observed that increasing layer thickness significantly quenches upconversion emission, emphasizing the advantage of 2D structures.

Conclusions:

  • Atomically thin 2D monolayer semiconductors provide a superior platform for solid-state NIR-to-visible upconversion.
  • The developed ultrathin bilayer film architecture offers a promising, efficient, and potentially non-toxic solution for upconversion applications.
  • Facile large-scale production and the unique properties of 2D materials open new avenues for solid-state upconversion research and development.