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When an RL (Resistor-Inductor) circuit is connected to a DC source, the complete response of the circuit can be divided into two parts: the transient response and the steady-state response.
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A Fully Integrated Low-Dropout Regulator with Improved Load Regulation and Transient Responses.

Chenkai Hu1,2, Zhizhi Chen1,2, Shenglan Ni1,2

  • 1The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

Micromachines
|October 27, 2022
PubMed
Summary
This summary is machine-generated.

This study presents an integrated low-dropout regulator achieving excellent load regulation (0.017 mV/mA) and fast transient responses. The novel design ensures stability across a wide load range, improving power efficiency for electronic devices.

Keywords:
adjustable threshold push–pull stagefast-transientfully integratedload regulationlow voltagelow-dropout regulatormaster–slave power transistorssystem-on-chip (SoC)

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Area of Science:

  • Electrical Engineering
  • Integrated Circuit Design

Background:

  • Low-dropout (LDO) regulators are crucial power management components in integrated circuits.
  • Existing LDO designs often face trade-offs between load regulation, transient response, and quiescent current consumption.
  • The need for high-performance LDOs in advanced semiconductor technologies (e.g., 40 nm) is increasing.

Purpose of the Study:

  • To develop a fully integrated LDO regulator with enhanced load regulation and transient response characteristics.
  • To maintain stable operation across a wide range of load currents (0-100 mA) in a 40 nm technology node.
  • To achieve a good figure of merit (FOM) without requiring additional transient enhancement circuits.

Main Methods:

  • Implementation of a three-stage structure combining an adjustable threshold push-pull stage (ATPS) and master-slave power transistors.
  • Utilizing the ATPS with an adjustable turn-on threshold controlled by a current source for efficient light-load operation.
  • Analysis of stability with varying parasitic load capacitance (up to 100 pF) and compensation capacitor (0.7 pF).

Main Results:

  • Achieved a superior load regulation of 0.017 mV/mA.
  • Demonstrated stability from 0 to 100 mA load current.
  • Transient response showed undershoot and overshoot less than 33 mV for a 100 mA load transient with a 100 ns edge time.
  • Dropout voltage was 200 mV at a 1.1 V input voltage.
  • No-load current consumption was 24.6 μA.

Conclusions:

  • The proposed LDO regulator design effectively improves load regulation and transient responses in 40 nm technology.
  • The integrated ATPS and master-slave topology provide stable performance across the full load range with low quiescent current.
  • The design offers a good FOM and meets stringent performance requirements without external components for transient enhancement.