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Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics.

Georgy Teplov1, Dmitry Zhevnenko1,2, Fedor Meshchaninov1,3

  • 1Laboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia.

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|October 27, 2022
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Summary

Researchers developed a novel method to study memristor degradation by analyzing resistance changes and auxiliary voltage-current characteristics. This approach reveals stable high-resistance states, improving understanding of these crucial microelectronic devices.

Keywords:
compact modelingdegradationmemristorsilicon nitride

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Area of Science:

  • Microelectronics
  • Materials Science
  • Solid State Physics

Background:

  • Memristors are essential components in modern microelectronics.
  • Classical methods struggle to analyze memristor behavior at the nanoscale due to complex physics.
  • Understanding memristor degradation is critical for device reliability.

Purpose of the Study:

  • To introduce a new approach for investigating the degradation of Ni/Si3N4/p+Si memristors.
  • To analyze memristor failure mechanisms up to the point of complete breakdown.
  • To interpret stable switching regions as distinct device states.

Main Methods:

  • Joint analysis of resistance change curves and auxiliary signal volt-ampere characteristics.
  • Simulation of stable region volt-ampere characteristics using a compact mobility modification model.
  • Application of a novel target function for optimization problem-solving.

Main Results:

  • Identification and characterization of stable high-resistance states during memristor degradation.
  • Demonstration of the proposed method's effectiveness in observing degradation processes.
  • Successful simulation of stable region characteristics, validating the model.

Conclusions:

  • The proposed joint analysis method offers enhanced insights into memristor degradation.
  • Stable high-resistance states represent predictable evolutionary phases of the device.
  • The developed simulation model accurately represents memristor behavior in these stable states.