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Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

Artur Tuktamyshev1, Stefano Vichi1, Federico Guido Cesura2

  • 1Isituto Nazionale di Fisica Nucleare, Sezione di Milano-Bicocca, 20100 Milano, Italy.

Nanomaterials (Basel, Switzerland)
|October 27, 2022
PubMed

Keywords:
III–V semiconductorsdroplet epitaxymetamorphic buffer layerquantum dotstrain relaxation

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