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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

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Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors.

Lado Filipovic¹, Siegfried Selberherr¹

¹Institute for Microelectronics, TU Wien, Gußhuasstraße 27-29/E360, 1040 Vienna, Austria.

Nanomaterials (Basel, Switzerland)

|October 27, 2022

Summary

Two-dimensional (2D) materials offer promising room-temperature gas sensing solutions compatible with complementary metal oxide semiconductor (CMOS) fabrication. These advanced materials enable sensitive detection of various gases, overcoming limitations of traditional semiconductor metal oxide (SMO) sensors.

Keywords:

2D materials CMOS integration MXenes VOCs gas sensing graphene oxide molybdenum disulfide nitrogen dioxide phosphorene transition metal dichalcogenides (TMDs)

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Area of Science:

Microelectronics
Materials Science
Chemical Sensing

Background:

The microelectronics industry seeks to integrate diverse semiconductor devices, including gas sensors, onto single chips.
Traditional semiconductor metal oxide (SMO) gas sensors require high temperatures and complex microheater integration, hindering complementary metal oxide semiconductor (CMOS) compatibility.
Room-temperature operation is desired for simpler, more cost-effective gas sensor integration.

Purpose of the Study:

To review promising two-dimensional (2D) materials for advanced gas sensing applications.
To evaluate the potential of 2D materials for integration with CMOS fabrication processes.
To explore 2D materials as alternatives to traditional SMO sensors for room-temperature gas detection.

Main Methods:

Literature review of recent advancements in 2D materials for gas sensing.
Analysis of 2D material properties relevant to CMOS integration and gas detection sensitivity.
Examination of specific 2D materials including graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes.

Main Results:

Two-dimensional (2D) materials exhibit high sensitivity to various gases at room temperature.
Certain 2D materials possess suitable band gaps for integration as channel materials in field-effect transistors (FETs) and sensing films.
These materials show significant potential for overcoming the limitations of high-temperature SMO sensors.

Conclusions:

Two-dimensional (2D) materials are highly promising for developing next-generation, room-temperature gas sensors.
Their compatibility with CMOS fabrication paves the way for integrated, mass-producible sensing devices.
Further research into specific 2D materials like TMDs, phosphorene, and MXenes is warranted for practical applications.