Flexible Threshold-Type Switching Devices with Low Threshold and High Stability Based on Silkworm Hemolymph.

Area of Science:

• Materials Science
• Electronics
• Biotechnology

Background:

• Flexible electronics require novel materials for nonvolatile memory.
• Biocompatible materials offer potential for advanced electronic devices.
• Existing memory technologies face limitations in flexibility and biocompatibility.

Purpose of the Study:

• To report a novel floating-gate flexible nonvolatile memory device.
• To utilize natural biological materials for memory applications.
• To investigate the storage characteristics and performance of the bio-based memory device.

Main Methods:

• Fabrication of a memory device using silkworm hemolymph, graphene quantum dots (floating-gate), and polymethyl methacrylate (PMMA) (insulating layer).
• Characterization of the device's electrical properties, including ON/OFF current ratio, setting voltage, durability, and data retention.
• Investigation of dual storage characteristics (Flash and WORM) by controlling limiting current during device setting.

Main Results:

• The device exhibits a high ON/OFF current ratio (4.76 × 10^6) and low setting voltage (<−1.75 V).
• Demonstrated good durability and retention ability, crucial for nonvolatile memory.
• Successfully achieved two distinct storage characteristics (Flash and WORM) controllable via limiting current.

Conclusions:

• The developed floating-gate flexible bioresistive random access memory utilizes natural biological materials.
• The device shows promising performance metrics and dual storage functionalities.
• This work presents a new avenue for multifunctional, biocompatible flexible memory development.