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Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET

Chong-Jhe Sun1, Chen-Han Wu1, Yi-Ju Yao1

  • 1Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.

Nanomaterials (Basel, Switzerland)
|October 27, 2022
PubMed

Keywords:
CMOS inverterSiGecomplementary FET (CFET)technology computer-aided design (TCAD)threshold voltage adjustment

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