Improving the Sensing Properties of Graphene MEMS Pressure Sensor by Low-Temperature Annealing in Atmosphere

The high demand for pressure devices with miniaturization and a wide bearing range has encouraged researchers to explore new high-performance sensors from different approaches. In this study, a sensitive element based on graphene in-plane compression properties for realizing pressure sensing is experimentally prepared using microelectromechanical systems (MEMS) fabrication technology; it consists of a 50 µm thick, 1400 µm wide square multilayer component membrane and a graphene monolayer with a meander pattern. The prepared sample is extensively characterized and analyzed by using various techniques, including atomic force microscopy, Raman spectroscopy, infrared spectroscopy, X-ray photoelectron spectroscopy, COMSOL finite element method, and density functional theory. The sensing performance of the new pressure sensor based on the sensitive element are obtained by theoretical analysis for electromechanical measurements of the sensitive element before and after low-temperature annealing in atmosphere. Results demonstrate that atmospheric annealing at 300 °C enhances the pressure sensing sensitivity by 4 times compared to pristine graphene without annealing, which benefits from the desorption of hydroxyl groups on the graphene surface during annealing. The sensitivity is comparable and even better than that of previous sensors based on graphene in-plane properties. Our results provide new insights into realizing high-performance MEMS devices based on 2D sensitive materials.